Atopic dermatitis (AD) is a chronic or chronically relapsing, eczematous, severely pruritic skin disorder associated with skin barrier dysfunction. The lesional skin of AD exhibits T helper 2 ...(TH2)‐deviated immune reactions. Interleukin‐31 (IL‐31), preferentially produced from TH2 cells, is a potent pruritogenic cytokine, and its systemic and local administration induces scratching behavior in rodents, dogs and monkeys. Recent clinical trials have revealed that administration of an anti‐IL‐31 receptor antibody significantly alleviates pruritus in patients with AD. In this review, we summarize recent topics related to IL‐31 and its receptor with special references to atopic itch.
While an increasing number of universities have or are committed to engaging their campuses in their surrounding communities, many recognize they lack the strategic focus and resources to maximize ...and sustain their impact on those communities. Place-based community engagement provides a powerful way to creatively connect campus and community to foster positive social transformation.
In developing community engagement strategies, most universities and community organizations face significant challenges in deciding who to partner with and why. Frequently this leads universities and community organizations to say "yes" to too many opportunities which significantly limit their ability to pursue long-term impact. Focusing on an established geographic area can make it much easier to decide where to deploy resources and which partnerships to prioritize and thus increase their ability to form strong and sustainable partnerships that are of greater value to all stakeholders.
This book presents the emerging model of place-based community engagement as a powerful process for attaining more positive and enduring results in their local communities as well as stimulating wider engagement by campus constituencies. Drawing upon the concept of collective impact and using data-driven decision making, place-based initiatives build long-term partnerships based upon a shared vision. Done thoughtfully, these place-based initiatives have attained impressive results.
Drawing upon the case studies of five institutions that have implemented place-based community engagement initiatives, the authors provide guidance on the opportunities, challenges, and considerations involved in putting a place-based approach into effect. By sharing the experiences of these five institutions, they describe in detail the routes each took to turn their place-based initiatives from concept to reality, and the results they achieved.
Plasma assisted polishing (PAP), in which the irradiation of atmospheric pressure water vapor plasma and ceria (CeO2) abrasive polishing are combined, is a novel finishing technique for ...single-crystal silicon carbide (4H-SiC). An atomically flat 4H-SiC surface (rms about 0.2nm) with a well-ordered step/terrace structure was obtained by PAP. Cross-sectional transmission electron microscopy (XTEM) observation revealed that plasma oxidation atomically flattened the interface of SiO2/SiC. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) measurement results showed the existence of a thin silicon oxycarbide layer, which is corrosion-resistant to hydrofluoric acid, at the interface. The combination of water vapor plasma oxidation and the mechanical removal of silicon oxide as well as silicon oxycarbide layers by a soft abrasive is effective in obtaining an atomically flat surface of 4H-SiC (0001) without introducing crystallographic subsurface damage.
Plasma-assisted polishing (PAP), which combines plasma modification and soft abrasive polishing, was used to flatten GaN. After the irradiation of CF4 plasma, GaN was modified to GaF3, greatly ...decreasing its surface hardness. The modified layer was removed by polishing using a CeO2 grindstone for surface flattening. It was revealed that while many pits were generated in conventional CMP using SiO2 or CeO2 slurry, which deteriorated the surface integrity and roughness of GaN, a pit-free and atomically flat GaN surface with a Sq roughness of 0.1nm order was obtained by the application of PAP, which is a dry polishing process.
A novel polishing technique combined with the irradiation of atmospheric pressure plasma was proposed for the finishing of a silicon carbide material. The irradiation of helium-based water vapor ...plasma efficiently oxidized the surface of single-crystal 4H–SiC (0
0
0
1), and a nanoindentation test revealed that the hardness of SiC decreased by one order of magnitude compared with that of the unprocessed surface. Plasma-assisted polishing using a CeO
2 abrasive enabled us to improve the surface roughness of a commercially available SiC wafer without introducing crystallographical subsurface damage, and a scratch-free atomically flat surface with an rms roughness of 0.1
nm level was obtained.
Single-crystal diamond (SCD) is considered to be an ideal material for next-generation power devices. Plasma-assisted polishing (PAP) without using an abrasive was applied to polish SCD fabricated by ...chemical vapor deposition. Argon-based plasma containing water vapour was used in the PAP to modify the surface of polishing plate and SCD (100), and SCD was polished under a polishing pressure ranging from 10 to 52.6kPa. Raman spectroscopy measurement showed that there was no residual stress on the polished SCD surface, and a polishing rate of 2.1μm/h and a surface roughness of 0.13nm Sq were obtained.
Metastatic extramammary Paget's disease (EMPD) is an intractable condition that is refractory to conventional treatments and the outcomes remain unsatisfactory
. Establishing an effective regimen ...with higher response rates and long-term efficacy is required.
For the finishing of difficult-to-machine materials, plasma-assisted polishing (PAP), which combines modification by water vapor plasma and polishing by a soft abrasive, was proposed. Optimization of ...plasma oxidation and abrasive polishing was conducted to increase the material removal rate of PAP, which was applied to 4H-SiC (0001). It was found that with a low concentration of water vapor in helium gas, the plasma oxidation rate was greatly increased. Also, because of the different oxidation rates of the four types of terrace that appear alternately in 4H-SiC, a high removal rate of the oxide was necessary to obtain a uniform step–terrace structure with atomic order.
Where has capitalism gone wrong? Why are advanced capitalist economies so sick and why do conventional policy solutions, such as reduced taxes and increased money supply, produce only wider income ...disparity and inequality?We now live in a new world in which we enjoy the highest living standard in history, acquiring ever more goods and services as necessary luxuries. Yet current policies only serve to expand public debt and exacerbate socio-economic inequality.In Too much stuff, Yamamura upends conventional capitalist wisdom to provide a new approach. He suggests the only way for capitalism and democracy to thrive is to increase investment to meet societal needs such as improving social safety nets, infrastructure, and better education and health care for all, but this means raising taxes. Both solutions-orientated and accessibly written, this book argues that this will help reduce the growing wealth gap which threatens global democracy. With fascinating examples from the US, Japan and Germany, as well as convincing evidence from across the Western world, this bold book challenges the economic orthodoxy and offers practical steps forward that we can all support.
The ATLAS experiment is going to replace the current Inner Detector with an all new inner tracker (ITk) in the ATLAS detector for HL-LHC at CERN. Silicon strip detectors cover the outer layers of the ...barrel and the endcap sections. We have designed and fabricated a prototype single-sided n+-in-p AC-coupled silicon strip sensor for the outer barrel layer with long strips (LS), ATLAS17LS. It is of the maximum allowable size to fit in a 6-in. silicon wafer, with an outer dimension of 9.80(width)×9.76(length)cm2. The sensor features two rows of LS strip segments, 4.83 cm strip length per segment, a strip pitch of 75.5 μm, and a slim edge design. We have implemented technology for high voltage operation of up to 1000V, with a good signal collection after irradiation fluence of 5.6 × 1014neq∕cm2at the end of HL-LHC operation.
We had two objectives for the ATLAS17LS fabrication: qualification of the sensor design and fabrication quality, and providing an adequate number of the sensors for prototyping the building blocks of the strip detector. The sensors were fabricated in 3 batches by HPK with standard wafers from the foundry (320 μm physical thickness). Additional 10 sensors were fabricated with a thinner active thickness of 240 μm to investigate the influence of active thickness on charge collection. Another additional 5 sensors, with special passivation to investigate the influence of passivation on humidity sensitivity. The visual inspection of fabricated sensors revealed an inadequacy that the designed metal width of 10 μm was too narrow. The initial measurements by the vendor showed that the sensors fulfilled the specifications: onset voltages of Microdischarge VMD above the operation voltage VOP (700V for the 1st and 2nd batches; 500V for the 3rd batch, which has improved the yield), leakage currents of < 0.1μA/cm2 at VOP, full depletion voltages VFD< 330V, and rates of bad strips <<1%.
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