The results of measurements of the root-mean-square (rms) surface roughness of CdZnTe substrates by confocal microscopy (CM), atomic force microscopy (AFM), and X-ray reflectometry (XRR) are ...compared. It is determined that CM yields the highest rms roughness values, AFM assumes an intermediate position, and XRR measurements produce results that are an order of magnitude lower than those obtained with the use of the other two techniques. It is demonstrated that CM rms roughness values depend to a considerable extent on the type of the microscope objective used in experiments. Probable reasons for the discrepancy between the obtained results are discussed.
The theory making it possible to rather accurately predict a complete set of characteristics (signals, noises, and photoelectric parameters) inherent to all components of the photodiode-based focal ...plane array (FPA) under design and optimize its parameters has been developed. The theory relies on a new approach to the determination of FPA irradiance, which ensures its calculations at any shape of the diaphragm in the light-insulating shield. Both staring and scanning FPAs, the latter of which operate under the condition of time delay and accumulation, are discussed. The theory has been verified using a 320 × 256 FPA. The calculated dependences of the signals and noises of photoelectric components are compared with the experimental values obtained at different accumulation times and background irradiation temperatures. The theoretical data are revealed to be in complete agreement with the experiment, confirming the model validity. The theory will be undoubtedly useful for designers, manufacturers, and users of FPAs. The model can easily be extended to systems with FPAs.
Relationships, which determine requirements for the resistance of the inversion layer for decreasing the influence of the guard ring on the dark current and photodiode noisess and allow obtaining the ...specified intercoupling coefficient between photosensitive elements in multielement photodiodes, are given. It is shown that dependences of the current of the guard ring on the bias voltage and the charge on the Si–SiO
2
interface in the presence of the inversion layer satisfy the current generation model in the space-charge region of the current. The resistance of the inversion layer increase with an increase in the bias voltage in accordance with the relationship
R
u
∼
V
1.5
.
A comparative analysis of the correlators of steady-state thermal and photoinduced stochastic fields (SFs) of concentrations and currents of mobile charge carriers in IR photodiodes and homogeneous ...semiconductors is presented. It is demonstrated that the correlators of thermal and photoinduced SFs of concentrations of mobile charge carriers are determined using conceptually identical expressions for any structure of the
p
–
n
junction and arbitrary polarity of applied voltage whereas the correlators of the SFs of photoinduced and dark currents are determined using conceptually identical expressions only for the reverse-biased
p
–
n
junction with a relatively wide base.
The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the ...surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions.
The temperature dependence of the minority charge carriers diffusion length in the active photosensitive layer of a matrix photodetector based on MCT heteroepitaxial structure grown by molecular beam ...epitaxy is studied.
U ovome preglednom radu dan je uvid u život i rad doajena znanosti o zračenju i zaštite od zračenja u Hrvatskoj do 1945. godine. Efektivni počeci znanosti o zračenju, pa tako i zaštite od zračenja na ...području Hrvatske sežu čak do kraja 19. stoljeća. Fizičari i kemičari bili su među prvima mogućim žrtvama izloženosti ionizirajućem zračenju, pa su tako i bili prvi koji su upozoravali na štetne učinke radijacije na žive organizme.
Pretraživanje dostupnih arhiva i poznate literature nije samo rasvijetlilo život i rad doajena znanosti o zračenju već je omogućilo sistematičan uvid u do sada nepoznate detalje važne za povijest i razvoj znanosti o zračenju, zaštite od zračenja, kao i o medicinskoj fi zici. Sve to pokazuje da Hrvatska od samoga početka ne samo da slijedi najsuvremenije znanstvene spoznaje iz tih područja, već i njima aktivno pridonosi.
UČENJE UČENJA Jagarinec, Tanja
Varaždinski učitelj,
08/2019, Letnik:
2, Številka:
2
Paper
Odprti dostop
Definicija učenja se s vremenom promijenila. Primarni model prijenosa znanja je smatrao studenta pasivnim primateljem. Novi model uveo je koncept učenja na temelju razlike između očekivanog i ...uspostavljenog. Suvremeni koncept učenja uvodi svjesno učenje s naglaskom na metakogniciju. Učenje učenja povezano je s metakognicijom, a možemo ga nazvati i meta-učenje. To uključuje znanje i sposobnost korištenja odgovarajućih strategija učenja i strategije rješavanja problema, poznavanje prednosti i nedostataka vlastitog znanja, točnu samoprocjenu vlastitih postignuća, kritičko razmišljanje o svrsi i ciljevima učenja, dobro upravljanje vremenom i informiranje, sposobnost samo-motiviranja i razvijanje pozitivnog stava prema učenju. Kada učimo fiziku, moramo uzeti u obzir i epistemološki plan.
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