In this paper, a high-speed image sensor with very high sensitivity is developed. The high sensitivity is achieved by introduction of backside illumination and charge-carrier multiplication (CCM). ...The high frame rate is guaranteed by installing the in situ storage image sensor (ISIS) structure on the front side. A test sensor of the BSI-ISIS has been developed and evaluated. It is shown that an image with a very low signal level embedded under the noise floor is recognizable by activating the CCM.
Single event burnout of high-power diodes Maier, K.H.; Denker, A.; Voss, P. ...
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms,
12/1998, Letnik:
146, Številka:
1-4
Journal Article
Recenzirano
High-power diodes might be damaged by a single particle of cosmic radiation. This particle has first to produce a secondary nucleus, that ionizes more densely, through a nuclear reaction with the ...silicon of the diode. A multiplication of the number of charge carriers, primarily produced by this nucleus, can occur and eventually lead to a break down. The onset of this charge carrier multiplication is investigated with accelerated heavy ions under well controlled conditions. Clear trends are revealed, but the process is not yet understood.
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