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  • Determination of local stres in PECVD nitride films
    Gspan, Boštjan ; Osredkar, Radko
    Silicon nitride and silicon oxynitride films grown on silicon substrates by plasma-enhanced chemical vapour deposition (PECVD) are stressed and the correlation of the film stress to its refractive ... index is presnted. It is shown that it is possible to determine the stress of the PECVD nitride films by measuring their refractive indices, which can be done locally, but that the method is not applicable to the PECVD oxynitride films.
    Vir: Microelectronics and reliability. - ISSN 0026-2714 (Vol. 30, No. 5, 1990, str. 911-913)
    Vrsta gradiva - članek, sestavni del
    Leto - 1990
    Jezik - angleški
    COBISS.SI-ID - 3254038

vir: Microelectronics and reliability. - ISSN 0026-2714 (Vol. 30, No. 5, 1990, str. 911-913)

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