This study focuses on the interaction between the oxide layer area of a transistor and its ferroelectric layer area. An experimental comparison of transistor oxide layer area demonstrates that the larger the ratio of oxide to ferroelectric layers, the larger the on/off ratio, thus improving performance. A subsequent experiment aimed to further demonstrate this in different sized devices, and changing the ratio of <inline-formula> <tex-math notation="LaTeX">\text{A}_{\text {HZO}}/\text{A}_{\text {SiO2}} </tex-math></inline-formula> (the area of HfZrO x divided by oxide layer) showed the same tendency as above, but also produced an unexpected finding in that a comparison of on/off ratio exhibits an abnormal electric characteristic. This study discusses this abnormal electric characteristic and proposes an explanatory physical model.