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Jiuren Zhou; Genquan Han; Yue Peng; Yan Liu; Jincheng Zhang; Qing-Qing Sun; Zhang, David Wei; Yue Hao
IEEE electron device letters, 08/2017, Letnik: 38, Številka: 8Journal Article
Negative capacitance (NC) GeSn pFETs integrated with HfZrO x (HZO) ferroelectric film is demonstrated with sub-20 mV/decade subthreshold swing (SS) over two orders of magnitude of IDS. The ratio of remnant polarization to coercivity in HZO is significantly improved with the increasing of the annealing temperature from 400°C to 500°C, which contributes to the effective reduction of hysteresis in ferroelectric NC GeSn transistors. Ferroelectric NC GeSn pFET annealed at 500°C achieves a hysteresis of 70 mV while maintaining a steep SS dramatically lower than 60 mV/decade, and an improved IDS over control device without HZO.
