E-viri
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Gaspar, Joao; Fonseca, Helder; Paz, Elvira; Martins, Marco; Valadeiro, Joao; Cardoso, Susana; Ferreira, Ricardo; Freitas, Paulo P.
IEEE transactions on magnetics, 04/2017, Letnik: 53, Številka: 4Journal Article
This paper reports on the integration of magnetic tunnel junction (MTJ) sensing devices with magnetoresistance responses above 150% on flexible substrates. The sensors are integrated in a fabrication process based on polyimide materials, and demonstrate sensitivities up to 250 μV/Oe for bias currents in the 100-μA range. Assessment of the sensors performance is done under controlled mechanical load conditions, and the magnetoresistance is only slightly affected (1% variation) while sensitivity changes by 7.5% when the bending radii reduce down to 5 mm. The results demonstrate the high potential of the MTJ sensors to be used in applications requiring bending and conforming to non-planar geometries, bringing magnetoelectronic technologies to hard-to-reach regions of space.
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