E-viri
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Hwang, Sungwoo; Baik, Chan-Wook; Whang, Dongmok
IEEE nanotechnology magazine, 09/2012, Letnik: 6, Številka: 3Magazine Article
The current status of synthesized semiconductor and metallic nanowires is still far from practical applications. However, in many cases, they serve as good technological precursors because their size and various physical properties are beyond what are obtainable from their lithographically patterned counterparts. Recently, aluminum nanowires (AlNWs) without grain boundaries and surface roughness were synthesized using a stress-induced growth technique. They exhibited ideal resistivity, high breakdown current density, and superb transmission at microwave frequencies, all of which provide clues for future very-large-scale integrated circuit (VLSIC) interconnects.
