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Guillet, Thomas; Galceran, Regina; Sierra, Juan F.; Belarre, Francisco J.; Ballesteros, Belén; Costache, Marius V.; Dosenovic, Djordje; Okuno, Hanako; Marty, Alain; Jamet, Matthieu; Bonell, Frédéric; Valenzuela, Sergio O.
Nano letters, 01/2024, Letnik: 24, Številka: 3Journal Article
Topological insulators (TIs) hold promise for manipulating the magnetization of a ferromagnet (FM) through the spin–orbit torque (SOT) mechanism. However, integrating TIs with conventional FMs often leads to significant device-to-device variations and a broad distribution of SOT magnitudes. In this work, we present a scalable approach to grow a full van der Waals FM/TI heterostructure by molecular beam epitaxy, combining the charge-compensated TI (Bi,Sb)2Te3 with 2D FM Fe3GeTe2 (FGT). Harmonic magnetotransport measurements reveal that the SOT efficiency exhibits a non-monotonic temperature dependence and experiences a substantial enhancement with a reduction of the FGT thickness to 2 monolayers. Our study further demonstrates that the magnetization of ultrathin FGT films can be switched with a current density of J c ∼ 1010 A/m2, with minimal device-to-device variations compared to previous investigations involving traditional FMs.
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