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Kwon, Daewoong; Chatterjee, Korok; Tan, Ava J.; Yadav, Ajay K.; Zhou, Hong; Sachid, Angada B.; Reis, Roberto Dos; Hu, Chenming; Salahuddin, Sayeef
IEEE electron device letters, 02/2018, Letnik: 39, Številka: 2Journal Article
Negative capacitance (NC) FETs with channel lengths from 30 nm to <inline-formula> <tex-math notation="LaTeX">50~\mu \text{m} </tex-math></inline-formula>, gated with ferroelectric hafnium zirconium oxide are fabricated on fully depleted silicon-on-insulator (FDSOI) substrates. Enhanced capacitance due to NC, hysteresis-free operation, and improved subthreshold slope are observed. The NC effect leads to enhancement of drain current for small voltage operation. In addition, improved short channel performance is demonstrated owing to the reverse drain induced barrier lowering characteristics of the NC operation.
