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Lee, M. H.; Wei, Y.-T; Chu, K.-Y; Huang, J.-J; Chen, C.-W; Cheng, C.-C; Chen, M.-J; Lee, H.-Y; Chen, Y.-S; Lee, L.-H; Tsai, M.-J
IEEE electron device letters, 2015-April, 2015-4-00, Letnik: 36, Številka: 4Journal Article
The antiferroelectricity in HfZrO 2 (HZO) annealed at 600 °C with an abrupt turn ON of FET characteristics with SSmin = 23 mV/dec and SSavg = 50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.
