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Huang, Xiao-Di; Li, Yi; Li, Hao-Yang; Xue, Kan-Hao; Wang, Xingsheng; Miao, Xiang-Shui
IEEE electron device letters, 04/2020, Letnik: 41, Številka: 4Journal Article
Through oxygen profile engineering, we fabricated W/AlOx/Al2O3/Pt bilayer memristors with a 250-nm feature size. The AlOx fabricated by sputtering serves as an oxygen vacancy source, whereas the Al2O3 deposited by atomic layer deposition acts as a dominant resistive switching (RS) layer. Our devices show forming-free RS behaviors with high speed (28 ns), uniform resistance distribution, large on/off ratio (~103@100K, ~103@298K, and ~80@400K), and good retention. Besides, temperature stability with record high endurance from cryogenic to high-temperature (108@100K, 1010@298K, and 107@400K) is demonstrated, to the best of our knowledge.
