E-viri
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Bauknecht, R.; Melchior, H.
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997Conference Proceeding
High-performance InP/InGaAs double HBTs operating in common-emitter mode with 7.5 W/mm output power density at 10 GHz are reported. A total output power of 600 mW was achieved with five-finger cells having total emitter areas of 176 /spl mu/m/sup 2/. Their f/sub T/ and f/sub max/ values are 74 GHz and 89 GHz, respectively. These cells exhibit small-signal maximum stable power gains of 17 dB and Mason's unilateral power gains of 20 dB at 10 GHz.
