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Tzu-Juei Wang; Hung-Wei Chen; Chih-Hsin Ko; John Yeh; Ping-Chun Yeh; Shoou-Jinn Chang; San-Lein Wu; Wen-Chin Lee; Tang, D.D.
2006 International SiGe Technology and Device Meeting, 2006Conference Proceeding
In this work, we investigate the characteristics of collector current (I C ) and breakdown voltage (BV CEO ) of SiGe HBTs under the mechanical uniaxial stress by a four-point bending apparatus. DeltaI c and DeltaBV CEO is found to be strain-polarity dependent, and there is a trade-off between DeltaI c and DeltaBV CEO at the same stress condition
