This paper presents the experimental results of \(17~MeV\) proton irradiation on a \(60~GHz\) low power, half-duplex transceiver (TRX) chip implemented in \(65~nm\) CMOS technology. It supports short range point-to-point data rate up to \(6~Gbps\) by employing on-off keying (OOK). To investigate the irradiation hardness for high energy physics applications, two TRX chips were irradiated with total ionizing doses (TID) of \(74~kGy\) and \(42~kGy\) and fluence of \(1.4~\times\)10\(^{14}~ N_{eq}/cm^2\) and \(0.8~\times\)10\(^{14}~N_{eq}/cm^2\) for RX and TX modes, respectively. The chips were characterized by pre- and post-irradiation analogue voltage measurements on different circuit blocks as well as through the analysis of wireless transmission parameters like bit error rate (BER), eye diagram, jitter etc. Post-irradiation measurements have shown certain reduction in performance but both TRX chips have been found operational through over the air measurements at \(5~Gbps\). Moreover, very small shift in the carrier frequency was observed after the irradiation.