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Bangsaruntip, S.; Cohen, G.M.; Majumdar, A.; Zhang, Y.; Engelmann, S.U.; Fuller, N.; Gignac, L.M.; Mittal, S.; Newbury, J.S.; Guillorn, M.; Barwicz, T.; Sekaric, L.; Frank, M.M.; Sleight, J.W.
2009 IEEE International Electron Devices Meeting (IEDM), 2009-Dec.Conference Proceeding
We demonstrate undoped-body, gate-all-around (GAA) Si nanowire (NW) MOSFETs with excellent electrostatic scaling. These NW devices, with a TaN/Hf-based gate stack, have high drive-current performance with NFET/PFET I DSAT = 825/950 ¿A/¿m (circumference-normalized) or 2592/2985 ¿A/¿m (diameter-normalized) at supply voltage V DD = 1 V and off-current I OFF = 15 nA/¿m. Superior NW uniformity is obtained through the use of a combined hydrogen annealing and oxidation process. Clear scaling of short-channel effects versus NW size is observed.
