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Yasuda, K.; Niraula, M.; Araki, N.; Miyata, M.; Kitagawa, S.; Kojima, M.; Ozawa, J.; Tsubota, S.; Yamaguchi, T.; Agata, Y.
Journal of electronic materials, 09/2017, Letnik: 46, Številka: 9Journal Article
Dry etching characteristics of single crystal (100) CdTe epitaxial layers grown on GaAs substrates were studied using CH 4 , H 2 , and Ar as process gases in an electron cyclotron resonance plasma. A smooth and anisotropic etching was obtained with CH 4 , H 2 , and Ar. No hydrocarbon polymer was found on the etched surface, which was confirmed by x-ray photoelectron spectroscopy measurement. Etching of the CdTe surface was also possible with H 2 and Ar; however, no etching was observed in the absence of H 2 . Dependence of the etch rate on plasma gas composition and flow rates was studied. Mechanisms of etching with and without CH 4 supply were also studied. Etched CdTe layers also showed no deterioration of electrical properties, which was confirmed by photoluminescence measurement at 4.2 K and Hall measurement at 300 K.
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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in: SICRIS
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