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  • Extraction of device S‐para...
    Hamze, Kassem; Pasquet, Daniel; Descamps, Philippe; De Ledinghen, Edouard

    Microwave and optical technology letters, November 2018, 2018-11-00, 20181101, 2018-11-01, Letnik: 60, Številka: 11
    Journal Article

    Semiconductor devices are tested within a complex environment including a loadboard and a socket. In this paper, we propose a calibration methodology and a RF de‐embedding technique that allows the extraction of the device parameters. This method is based on the utilization of several calibration elements inspired by the TRL method. This study has been applied on an active device and the results have been validated using a real test solution.