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Budtolaev, A. K.; Khakuashev, P. E.; Chinareva, I. V.; Gorlachuk, P. V.; Ladugin, M. A.; Marmaluk, A. A.; Ryaboshtan, Yu. L.; Yarotskaya, I. V.
Journal of communications technology & electronics, 03/2017, Letnik: 62, Številka: 3Journal Article
The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.
