Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures

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Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures

Iakovleva, N. I.; Nikonov, A. V.; Shabarov, V. V.

Journal of communications technology & electronics, 10/2016, Letnik: 61, Številka: 10

Journal Article

The absorption coefficient of HgCdTe structures grown by the methods of liquid-phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD) is studied and calculated. The experimental data are compared to a theoretical absorption spectrum model, which is based on the fundamental absorption effect and the general theory of direct interband optical transitions, as well as other empirical dependences. The Fermi level shift in the studied HgCdTe structures and the slope of experimental absorption characteristics are calculated.

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Iakovleva, N. I. | Nikonov, A. V. | Shabarov, V. V.

Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.

Leto	Faktor vpliva		Izdaja		Kategorija		Razvrstitev
Leto	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

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