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Yao, T.; Uesugi, K.; Komura, T.; Yoshimura, M.
Journal of crystal growth, 05/1996, Letnik: 163, Številka: 1Journal Article, Conference Proceeding
We report an atomistic study on solid phase epitaxy processes of amorphous Si layers on Si(001) using a scanning tunneling microscope. The amorphous layers are prepared by vacuum evaporation, Ar +-ion sputtering, or P +-ion implantation. The surface morphology of the as-prepared surface is strongly damaged by energetic impinging particles. The solid phase epitaxy processes are strongly correlated with the surface damage: crystallization of amorphous layers by annealing at around 250°C is observed on both the vacuum deposited and Ar +-ion sputtered surfaces, while an annealing temperature higher than 730°C is needed to recover the crystallinity of the P +-ion implanted surface.
