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Paoloni, E.; Avanzini, C.; Batignani, G.; Bettarini, S.; Bosi, F.; Calderini, G.; Casarosa, G.; Ceccanti, M.; Cenci, R.; Cervelli, A.; Crescioli, F.; Dell’Orso, M.; Forti, F.; Giannetti, P.; Giorgi, M.A.; Lusiani, A.; Gregucci, S.; Mammini, P.; Marchiori, G.; Massa, M.; Morsani, F.; Neri, N.; Piendibene, M.; Profeti, A.; Rizzo, G.; Sartori, L.; Walsh, J.; Yurtsev, E.; Manghisoni, M.; Re, V.; Traversi, G.; Bruschi, M.; Di Sipio, R.; Giacobbe, B.; Gabrielli, A.; Giorgi, F.; Pellegrini, G.; Sbarra, C.; Semprini, N.; Spighi, R.; Valentinetti, S.; Villa, M.; Zoccoli, A.; Citterio, M.; Liberali, V.; Palombo, F.; Andreoli, C.; Gaioni, L.; Pozzati, E.; Ratti, L.; Speziali, V.; Gamba, D.; Giraudo, G.; Mereu, P.; Dalla Betta, G.F.; Soncini, G.; Fontana, G.; Bomben, M.; Bosisio, L.; Cristaudo, P.; Giacomini, G.; Jugovaz, D.; Lanceri, L.; Rashevskaya, I.; Vitale, L.; Venier, G.
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 02/2011, Letnik: 628, Številka: 1Journal Article
We report on further developments of our proposed design approach for a full in-pixel signal processing chain of deep N-well monolithic active pixel sensor, by exploiting the triple well option of a CMOS 130 nm process. Two different geometries of the collecting electrode (namely “Apsel 3 T 1 M 1” and “Apsel 3 T 1 M 2”) was implemented to compare their charge collection efficiency. The results of the characterization of the various versions of pixel matrices with a pion beam of 120 GeV/ c at the SPS H6 CERN facility will be presented. The performances of an “Apsel 3 T 1” chip irradiated with a dose up to 10 Mrad (Co 60) was also measured. Comparison will be presented among the irradiated and the new chip showing the impact of radiation damages on tracking efficiencies.
