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Ielmini, D.; Boniardi, M.; Lacaita, A.L.; Redaelli, A.; Pirovano, A.
Microelectronic engineering, 07/2009, Letnik: 86, Številka: 7Journal Article, Conference Proceeding
Data retention in phase-change memory (PCM) devices is the result of two physical phenomena: structural relaxation (SR) and crystallization of the amorphous chalcogenide material. Although the two processes are rather different, we show in this paper that a common physical interpretation for SR and crystallization kinetics is possible. Activation energies and Arrhenius pre-factors for SR and crystallization are found to coherently obey a Meyer–Neldel rule and are explained by many-body thermal excitation of weakly-bonded and normally-bonded clusters, respectively.
