3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100)

E-viri

Recenzirano

$3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100)$

3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100)

Malachias, A; Kycia, S; Medeiros-Ribeiro, G; Magalhães-Paniago, R; Kamins, T I; Williams, R Stanley

Physical review letters, 10/2003, Letnik: 91, Številka: 17

Journal Article

Three-dimensional composition maps of nominally pure Ge domes grown on Si(001) at 600 degrees C were obtained from grazing incidence anomalous x-ray scattering data at the Ge K edge. The data were analyzed in terms of a stack of layers with laterally varying concentration. The results demonstrated that the domes contained a Si-rich core covered by a Ge-rich shell and were independently supported by selective etch experiments. The composition profile resulted from substrate Si alloying into the Ge during growth to partially relax the stress in and under the domes.

Išči dalje

Avtor

Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.

Leto	Faktor vpliva		Izdaja		Kategorija		Razvrstitev
Leto	JCR	SNIP	JCR	SNIP	JCR	SNIP	JCR	SNIP

Povezave do osebnih bibliografij avtorjev	Povezave do podatkov o raziskovalcih v sistemu SICRIS

Vir: Osebne bibliografije in: SICRIS

Naloži sliko

Vnos na polico

Dodajanje gradiva na polico je uspelo.

Dodajanje gradiva na polico je spodletelo.

Dodajanje gradiva na polico ni bilo potrebno.

Trajna povezava

E-pošta

Faktor vpliva

Izberite knjižnično izkaznico:

Baze podatkov, v katerih je revija indeksirana

Citiranje

Tema