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Kowarik, S; Gerlach, A; Sellner, S; Schreiber, F; Cavalcanti, L; Konovalov, O
Physical review letters, 03/2006, Letnik: 96, Številka: 12Journal Article
We study kinetically controlled orientational and structural transitions of molecular thin films during growth in situ and in real time, using diindenoperylene (DIP) as an example. By time-resolved surface-sensitive x-ray scattering (out of plane and in plane), we follow the organic molecular beam deposition of DIP on silicon oxide, on stepped sapphire, and on rubrene as an organic model surface. We identify transitions for the few-monolayer (ML) regime, as well as for thick (several 10's of ML) films. We show that the differences in the interaction of DIP with the substrate change the thickness as well as temperature range of the transitions, which include (transient) strain, subtle changes of the orientation, as well as complete reorientation. These effects should be considered rather general features of the growth of organics, which, with its orientational degrees of freedom, is qualitatively different from growth of inorganics.
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