For thermoelectric and other device applications there has been great interest in the chemical doping of conjugated polymer films. Solution doping followed by film deposition generally produces poor-quality films, but this issue can be alleviated by sequential doping: a pure polymer film is deposited first, and the dopant is then added as a second processing step, preserving the quality and structure of the original polymer film. In this paper, we compare two methods for sequential doping of conjugated polymer films: evaporation doping, where a controlled thickness of dopant is added via thermal sublimation to a temperature-controlled polymer film, and sequential solution doping, where the dopant is spin cast from a solvent chosen to swell but not dissolve the underlying polymer film. To compare these two different types of sequential doping, we examine the optical, electrical, and structural properties of poly­(3-hexylthiophene-2,5-diyl) (P3HT) films doped by each method with the small-molecule dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as a function of the polymer film thickness. Although each method intercalates dopant in fundamentally unique ways, we find that both vapor and solution doping methods produce films that share many of the same properties. Interestingly, both methods can produce doped P3HT films with conductivities of ∼5 S/cm and comparable thermoelectric properties, even for films as thick as 400 nm. For the evaporation method, an “overhead” dopant film thickness of ∼6 nm is required, either to promote reorganization of existing crystallites or to fill preexisting trap states in the polymer film. After the overhead amount has been deposited, the thickness of the dopant layer that must be evaporated to reach the optimal electrical conductivity is ∼1/3 that of the underlying polymer film. For a given P3HT film thickness, the amount of evaporated dopant needed to produce the highest conductivity corresponds to a thiophene monomer to ionized dopant ratio of ∼8.5:1. For solution processing, with the appropriate choice of solvent and dopant concentration, we show that P3HT films as thick as 2 μm can be doped to achieve conductivities of ∼5 S/cm and thermoelectric power factors approaching 2 μW/mK2. For either method, if excess dopant is applied, it remains in neutral form either in the amorphous regions or on top of the film, reducing the conductivity by increasing the film thickness. For both methods, UV–vis absorption can be used as a quick proxy to easily monitor whether saturation doping levels have been reached or exceeded. Fourier transform infrared spectroscopy (FTIR) and grazing-incidence wide-angle X-ray scattering (GIWAXS) both show that vapor-doped films and thicker solution-doped films have improved morphologies that result in more mobile carriers. Overall, we demonstrate that it is a straightforward process to select a sequential doping method for a desired application: evaporation doping is more amenable to large-area films, while solution doping is lower cost and better suited for polymer films with micrometer thicknesses.