This letter presents a fused silica inductive vibrating ring gyroscope (IVRG). The resonator of the gyroscope is fabricated on a 4-inch fused silica wafer. Benefiting from the technique of laser-induced assisted etching (LIAE), the microstructures on the fused silica wafers have an extremely high aspect ratio of 60.2 and the average roughness of the sidewall is <inline-formula> <tex-math notation="LaTeX">0.41~\mu </tex-math></inline-formula> m. The voltage can be directly extracted from the resonator without performing a C/V converter. This device has a Q factor of 1007196 and 1104764 and a resonant frequency of 17950.77 Hz and 17950.86 Hz after vacuum packaged. Although the gyroscope has a maximum angle-dependent bias drift of <inline-formula> <tex-math notation="LaTeX">0.42~^{\circ } </tex-math></inline-formula>/s when operated in the rate-integration mode, the angle tracking error is only 4.3° (34.1ppm) after 30 seconds high-speed rotation test.