A spin torque magnetoresistive random access memory (ST-MRAM) holds great promise to be a fast, high density, nonvolatile memory that can enhance the performance of a variety of applications, particularly when used as a non-volatile buffer in data storage devices and systems. Towards that end, we have developed a fully functional 64 Mb DDR3 ST-MRAM built on 90 nm CMOS technology. The memory is organized in an 8-bank configuration that can sustain 1.6 GigaTransfers/s (DDR3-1600). We have run standard memory tests, such as a March6N pattern, on the full 64 Mb at 800 MHz with 0 fails for greater than 10 5 cycles. Full functionality was also verified from 0°C to 70°C with no significant change in performance. The bits are magnetic tunnel junctions (MTJs) having an MgO tunnel barrier and a magnetic free layer made of a CoFeB-based alloy with an in-plane magnetization, but with an out-of-plane anisotropy reduced by more than 50% due to an enhanced perpendicular surface anisotropy. To enable the 64 Mb performance, we developed an MTJ stack that has low switching voltage (V sw ), high breakdown voltage (V bd ), and excellent switching reliability with tight distributions. The ST switching distribution has σ ≈ 10%, and we found excellent agreement with a single Gaussian distribution down to an error rate . For our optimized material, the V sw /V bd ≈ 0.3, and the separation between V sw and V bd is ≈ 25σ. The energy barrier to magnetization reversal (E b ) was characterized using both time-dependent coercivity and higher temperature to accelerate reversal. We found the average E b ≈ 70kbT.