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Engel, B.N.; Akerman, J.; Butcher, B.; Dave, R.W.; DeHerrera, M.; Durlam, M.; Grynkewich, G.; Janesky, J.; Pietambaram, S.V.; Rizzo, N.D.; Slaughter, J.M.; Smith, K.; Sun, J.J.; Tehrani, S.
IEEE transactions on magnetics, 2005-Jan., 2005, 2005-01-00, 20050101, Letnik: 41, Številka: 1Journal Article
A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum 2 . The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented
