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Sarath D. Gunapala, Sarath D. Gunapala; Sumith V. Bandara, Sumith V. Bandara; Cory J. Hill, Cory J. Hill; David Z. Ting, David Z. Ting; John K. Liu, John K. Liu; Sir B. Rafol, Sir B. Rafol; Edward R. Blazejewski, Edward R. Blazejewski; Jason M. Mumolo, Jason M. Mumolo; Sam A. Keo, Sam A. Keo; Sanjay Krishna, Sanjay Krishna; Y.-C. Chang, Y.-C. Chang; Craig A. Shott, Craig A. Shott
IEEE journal of quantum electronics, 03/2007, Letnik: 43, Številka: 3Journal Article
Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45deg and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 mum, with peak detectivity reaching ~1times10 super(10) Jones at 77 K. The devices were fabricated into the first long-wavelength 640times512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature
