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Tsung-Ming Tsai; Kuan-Chang Chang; Ting-Chang Chang; Rui Zhang; Tong Wang; Chih-Hung Pan; Kai-Huang Chen; Hua-Mao Chen; Min-Chen Chen; Yi-Ting Tseng; Po-Hsun Chen; Ikai Lo; Jin-Cheng Zheng; Jen-Chung Lou; Sze, Simon M.
IEEE electron device letters, 2016-April, 2016-4-00, 20160401, Letnik: 37, Številka: 4Journal Article
This letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be achieved around both the active TiN electrode and the inert Pt electrode. In addition, complementary resistance switching (CRS) characteristics can be observed without current compliance during dc voltage sweep operations. Electrical measurement data fitting results indicate that the oxygen-rich ITO near top and bottom electrodes works as a double-ended resistive switching layer. Based on the analysis of the current conduction mechanism, we propose a physical model to interpret the CRS behaviors in ITO RRAM devices.
