We illustrate novel optimization techniques via simulations for Hopfield networks constructed from manufacturable three-terminal Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) synaptic circuit elements. We first present a computationally-light, memristor-based, highly accurate static compact model for the SONOS synapses used in our simulations. We then show how to exploit analog errors in programming resistances and current leakage, and the continuous tunability of the SONOS synapses to enable transient chaotic group dynamics, to accelerate the convergence of a Hopfield network. We project improvements in energy consumption and time to solution relative to existing CPUs and GPUs by at least 4 orders of magnitude, and also exceed the projected performance of two-terminal memristor-based crossbars in addition to a 100-fold increase in error-resilient array size (i.e. problem size).