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Johansson, Jonas; Svensson, C. Patrik T; Mårtensson, Thomas; Samuelson, Lars; Seifert, Werner
The journal of physical chemistry. B, 07/2005, Letnik: 109, Številka: 28Journal Article
We present a mass transport model based on surface diffusion for metal-particle-assisted nanowire growth. The model explains the common observation that for III/V materials thinner nanowires are longer than thicker ones. We have grown GaP nanowires by metal-organic vapor phase epitaxy and compared our model calculations with the experimental nanowire lengths and radii. Moreover, we demonstrate that the Gibbs−Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.
