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van der Wel, A.P.; Klumperink, E.A.M.; Gierkink, S.L.J.; Wassenaar, R.F.; Wallinga, H.
IEEE electron device letters, 2000-Jan., 2000-01-00, 20000101, Letnik: 21, Številka: 1Journal Article
A new measurement setup is presented that allows the observation of 1/f noise spectra in MOSFET's under switched bias conditions in a wide frequency band (10 Hz-100 kHz). When switching between inversion and accumulation, MOSFET's of different manufacturers invariably show reduced 1/f noise power density for frequencies below the switching frequency. At low frequencies (10 Hz), a 5-8 dB reduction in intrinsic 1/f noise power density is found for different devices, largely independent of the switching frequency (up to 1 MHz). The switched bias measurements render detailed wideband 1/f noise spectra of switched MOSFET's, which is useful for 1/f noise model validation and analog circuit design.
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