Silicon Drift Detectors (SDDs) combine a large sensitive area with a small value of the output capacitance and are therefore well suited for high resolution, high count rate X-ray spectroscopy. The low leakage current level obtained by the elaborated processing technology makes it possible to operate them at room temperature or with moderate cooling. A brief description of the device principle is followed by the presentation of first results of a new production of large area SDDs with external electronics. Performance and applications of the already established SDDs with on-chip amplification are summarised. Various shapes of Multichannel Drift Detectors are introduced as well as their use in new experiments like X-ray holography and in new systems like an Anger camera for γ-ray imaging.