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  • Record Open‐Circuit Voltage...
    Gharibzadeh, Saba; Abdollahi Nejand, Bahram; Jakoby, Marius; Abzieher, Tobias; Hauschild, Dirk; Moghadamzadeh, Somayeh; Schwenzer, Jonas A.; Brenner, Philipp; Schmager, Raphael; Haghighirad, Amir Abbas; Weinhardt, Lothar; Lemmer, Uli; Richards, Bryce S.; Howard, Ian A.; Paetzold, Ulrich W.

    Advanced energy materials, June 5, 2019, Letnik: 9, Številka: 21
    Journal Article

    In this work, the authors realize stable and highly efficient wide‐bandgap perovskite solar cells that promise high power conversion efficiencies (PCE) and are likely to play a key role in next generation multi‐junction photovoltaics (PV). This work reports on wide‐bandgap (≈1.72 eV) perovskite solar cells exhibiting stable PCEs of up to 19.4% and a remarkably high open‐circuit voltage (VOC) of 1.31 V. The VOC‐to‐bandgap ratio is the highest reported for wide‐bandgap organic−inorganic hybrid perovskite solar cells and the VOC also exceeds 90% of the theoretical maximum, defined by the Shockley–Queisser limit. This advance is based on creating a hybrid 2D/3D perovskite heterostructure. By spin coating n‐butylammonium bromide on the double‐cation perovskite absorber layer, a thin 2D Ruddlesden–Popper perovskite layer of intermediate phases is formed, which mitigates nonradiative recombination in the perovskite absorber layer. As a result, VOC is enhanced by 80 mV. By coating n‐butylammonium bromide on wide‐bandgap double‐cation perovskite absorber layers (EG ≈ 1.72 eV), a thin 2D Ruddlesden–Popper perovskite layer of intermediate phase is formed. The resulting heterostructure mitigates nonradiative recombination and enables a high open‐circuit voltage of up to 1.31 V and stable power output efficiencies of up to 19.4%.