E-viri
Recenzirano
-
Ahn, S.-E.; Lee, M.-J.; Park, Y.; Kang, B. S.; Lee, C. B.; Kim, K. H.; Seo, S.; Suh, D.-S.; Kim, D.-C.; Hur, J.; Xianyu, W.; Stefanovich, G.; Yin, H.; Yoo, I.-K.; Lee, J.-H.; Park, J.-B.; Baek, I.-G.; Park, B. H.
Advanced materials (Weinheim), 03/2008, Letnik: 20, Številka: 5Journal Article
A novel memory cell structure with a Pt/Ti‐doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance‐change‐based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm×100 nm. High‐density universal memory can be fabricated by combining this node element with a selective switch.
