E-viri
Recenzirano
-
Li, Mengjiao; Yang, Feng‐Shou; Hsu, Hung‐Chang; Chen, Wan‐Hsin; Kuo, Chia Nung; Chen, Jiann‐Yeu; Yang, Shao‐Heng; Yang, Ting‐Hsun; Lin, Che‐Yi; Chou, Yi; Lee, Mu‐Pai; Chang, Yuan‐Ming; Yang, Yung‐Cheng; Lee, Ko‐Chun; Chou, Yi‐Chia; Lien, Chen‐Hsin; Lin, Chun‐Liang; Chiu, Ya‐Ping; Lue, Chin Shan; Lin, Shu‐Ping; Lin, Yen‐Fu
Advanced functional materials, 01/2021, Letnik: 31, Številka: 5Journal Article
Defect engineering represents a significant approach for atomically thick 2D semiconductor material development to explore the unique material properties and functions. Doping‐induced conversion of conductive polarity is particularly beneficial for optimizing the integration of layered electronics. Here, controllable doping behavior in palladium diselenide (PdSe2) transistor is demonstrated by manipulating its adatom‐vacancy groups. The underlying mechanisms, which originate from reversible adsorption/desorption of oxygen clusters near selenide vacancy defects, are investigated systematically via their dynamic charge transfer characteristics and scanning tunneling microscope analysis. The modulated doping effect allows the PdSe2 transistor to emulate the essential characteristics of photo nociceptor on a device level, including firing signal threshold and sensitization. Interestingly, electrostatic gating, acting as a neuromodulator, can regulate the adaptive modes in nociceptor to improve its adaptability and perceptibility to handle different danger levels. An integrated artificial nociceptor array is also designed to execute unique image processing functions, which suggests a new perspective for extension of the promise of defect engineered 2D electronics in simplified sensory systems toward use in advanced humanoid robots and artificial visual sensors. Modulable conductive polarity is demonstrated in the PdSe2 ambipolar transistor by Se vacancy‐dominated defect engineering via laser irradiation. It endows the PdSe2 transistor‐based synaptic device with convertible plasticity to emulate the tunable adaptive features in the photo nociceptor, providing a new vista for the defect‐engineered van der Waals electronics to exploit novel applications toward advanced artificial intelligent machines.
Avtor
![loading ... loading ...](themes/default/img/ajax-loading.gif)
Vnos na polico
Trajna povezava
- URL:
Faktor vpliva
Dostop do baze podatkov JCR je dovoljen samo uporabnikom iz Slovenije. Vaš trenutni IP-naslov ni na seznamu dovoljenih za dostop, zato je potrebna avtentikacija z ustreznim računom AAI.
Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
---|---|---|---|---|---|---|---|---|
JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
Baze podatkov, v katerih je revija indeksirana
Ime baze podatkov | Področje | Leto |
---|
Povezave do osebnih bibliografij avtorjev | Povezave do podatkov o raziskovalcih v sistemu SICRIS |
---|
Vir: Osebne bibliografije
in: SICRIS
To gradivo vam je dostopno v celotnem besedilu. Če kljub temu želite naročiti gradivo, kliknite gumb Nadaljuj.