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Miao, Feng; Strachan, John Paul; Yang, J. Joshua; Zhang, Min-Xian; Goldfarb, Ilan; Torrezan, Antonio C.; Eschbach, Peter; Kelley, Ronald D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley
Advanced materials (Weinheim), December 15, 2011, Letnik: 23, Številka: 47Journal Article
By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature‐dependent transport measurements indicate a unique resistance switching mechanism.
