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  • High Efficiency O‐band Prea...
    Gnanamani, Risab; Bertin, Hervé; Besancon, Claire; Mekhazni, Karim; Caillaud, Christophe; Deng, Marina; Mukherjee, Chhandak; Maneux, Cristell

    Physica status solidi. A, Applications and materials science, July 2024, Letnik: 221, Številka: 13
    Journal Article

    With the continuous increase in data traffic and enormous consumption of data in terms of video on demand services and cloud computing, there is an increasing demand for high speed and high sensitivity short reach receivers for passive optical networks (PON) access network which are point to multi‐point networks. Avalanche photodiodes (APD) are the standard receivers in PON networks due to their high sensitivity and low cost. However, it is currently not clear if they can provide high bandwidth above 40 GHz with good performance (gain, noise, etc.). Furthermore, standard PIN photodiodes do not provide sufficient sensitivity for PON networks. Therefore, in this article a SOA‐UTC receiver is proposed, which is a photonic integrated circuit (PIC) comprising a semiconductor optical amplifier (SOA) for optical preamplification and a high‐speed uni‐travelling‐carrier (UTC) photodiode for opto‐electronic conversion. A very high responsivity of 140 A W−1 is demonstrated, with a polarization dependent loss (PDL) around 1 dB and a 3 dB bandwidth of 48 GHz, which is very promising for future PON network with 50 Gbit s−1 capacity and above. A high speed and high sensitivity preamplified receiver for Passive Optical Network (PON) is proposed. We demonstrate a very high responsivity of 140 A/W, with a Polarization Dependent Loss (PDL) around 1 dB and a 3‐dB bandwidth of 48 GHz, which is very promising for future PON network with 50 Gbit/s capacity and above. W−1, with a polarization dependent loss (PDL) around 1 and a 3 dB bandwidth of 48 GHz, which is very promising for future PON network with 50 Gbit s−1 capacity and above.