•This paper reports the first self-powered, flexible, and high-performance single SiC nanowire ultraviolet photodetector.•The device shows an excellent detectivity of 7.2 × 1010 cm.Hz1/2. W−1 and external quantum efficiency (EQE) of 83% at 0 V.•The device shows remarkable performance parameters with the sensitivity of 1756% and responsivity of 0.17 A/W at 0 V. Display omitted This paper reports a very fine-pattern, flexible, self-powered, and cost-effective silicon carbide single nanowire ultraviolet photodetector (SiCNW-UVPD) with a high sensitivity of 1756%, a responsivity of 0.17 A/W, and a shallow dark current of ~0.08 pA. The device exhibits an excellent detectivity value of 7.2 × 1010 cm.Hz1/2. W−1 and external quantum efficiency (EQE) of 83% without the need of any external power (0 V) under 254 nm ultraviolet light. The remarkable performance parameters having the highest reported sensitivity and responsivity values for a self-powered SiC nanowire-based photodetector along with very small size and cost-efficiency could offer unique opportunities in new generation, flexible, self-powered nanoscale optoelectronics.