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Lee, Jaeyu; Jang, G.; Kim, J.; Oh, B.; Kim, D.-E.; Lee, S.; Kim, J.-H.; Ko, J.; Min, C.; Shin, S.
Journal of synchrotron radiation, July 2020, Letnik: 27, Številka: 4Journal Article
This paper presents the required structure and function of a ring‐FEL as a radiation source for extreme ultraviolet radiation lithography (EUVL). A 100 m‐long straight section that conducts an extremely low emittance beam from a fourth‐generation storage ring can increase the average power at 13.5 nm wavelength to up to 1 kW without degrading the beam in the rest of the ring. Here, simulation results for a ring‐FEL as a EUVL source are described. This paper demonstrates a ring‐FEL as an EUV lithography tool in a fourth‐generation storage ring.
