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Fuller, Elliot J.; Gabaly, Farid El; Léonard, François; Agarwal, Sapan; Plimpton, Steven J.; Jacobs‐Gedrim, Robin B.; James, Conrad D.; Marinella, Matthew J.; Talin, A. Alec
Advanced materials, 01/2017, Letnik: 29, Številka: 4Journal Article
Nonvolatile redox transistors (NVRTs) based upon Li‐ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi‐level analog states, “write” linearity, low‐voltage switching, and low power dissipation. Simulations of backpropagation using the device properties reach ideal classification accuracy. Physics‐based simulations predict energy costs per “write” operation of <10 aJ when scaled to 200 nm × 200 nm.
