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Aziz, Imran; Dancila, Dragos; Dittmeier, Sebastian; Siligaris, Alexandre; Dehos, Cedric; De Lurgio, Patrik Martin; Djurcic, Zelimir; Drake, Gary; Gonzalez Jimenez, Jose Luis; Gustaffson, Leif; Kim, Don-Won; Locci, Elizabeth; Pfeiffer, Ulrich; Rodriquez Vazquez, Pedro; Röhrich, Dieter; Schöning, Andre; Soltveit, Hans Kristian; Ullaland, Kjetil; Vincent, Pierre; Yang, Shiming; Brenner, Richard
Journal of engineering (Stevenage, England), August 2019, Letnik: 2019, Številka: 8Journal Article
This article presents the experimental results of 17 MeV proton irradiation on a 60 GHz low power, half-duplex transceiver (TRX) chip implemented in 65 nm CMOS technology. It supports short range point-to-point data rate up to 6 Gbps by employing on-off keying (OOK). To investigate the irradiation hardness for high-energy physics (HEP) applications, two TRX chips were irradiated with total ionising doses (TID) of 74 and 42 kGy and fluence of $1.4 \times 10^{14}N_{{\rm eq}}/{\rm c}{\rm m}^2$1.4×1014Neq/cm2 and $0.8 \times 10^{14}N_{{\rm eq}}/{\rm c}{\rm m}^2$0.8×1014Neq/cm2 for RX and TX modes, respectively. The chips were characterised by pre- and post-irradiation analogue voltage measurements on different circuit blocks as well as through the analysis of wireless transmission parameters like bit error rate (BER), eye diagram, jitter etc. Post-irradiation measurements have shown certain reduction in performance but both TRX chips have been found operational through over the air measurements at 5 Gbps. Moreover, very small shift in the carrier frequency was observed after the irradiation.
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Leto | Faktor vpliva | Izdaja | Kategorija | Razvrstitev | ||||
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JCR | SNIP | JCR | SNIP | JCR | SNIP | JCR | SNIP |
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Vir: Osebne bibliografije
in: SICRIS
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