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Kushwaha, S K; Pletikosić, I; Liang, T; Gyenis, A; Lapidus, S H; Tian, Yao; Zhao, He; Burch, K S; Lin, Jingjing; Wang, Wudi; Ji, Huiwen; Fedorov, A V; Yazdani, Ali; Ong, N P; Valla, T; Cava, R J
Nature communications, 04/2016, Letnik: 7, Številka: 1Journal Article
A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high-quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons and be growable as large, high-quality bulk single crystals. Here we show that this material obstacle is overcome by bulk crystals of lightly Sn-doped Bi1.1Sb0.9Te2S grown by the vertical Bridgman method. We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering. We present this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.
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