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  • Complexion time-temperature...
    Schumacher, Onthida; Marvel, Christopher J.; Kelly, Madeleine N.; Cantwell, Patrick R.; Vinci, Richard P.; Rickman, Jeffrey M.; Rohrer, Gregory S.; Harmer, Martin P.

    Current opinion in solid state & materials science, October 2016, 2016-10-00, 20161001, Letnik: 20, Številka: 5
    Journal Article

    Display omitted •An approach to characterize complexion transition kinetics is presented.•The fundamentals of bulk phase and complexion TTT diagrams are compared.•Avrami-type analysis quantifies the time dependence of complexion transitions.•Newly constructed complexion TTT diagrams enable engineered microstructures.•Future challenges and recommendations for complexion TTT diagrams are discussed. Grain boundaries and other interfaces can undergo complexion transitions from one thermodynamic state to another, resulting in discontinuous changes in interface properties such as diffusivity, mobility, and cohesive strength. The kinetics of such complexion transitions has been largely overlooked until recently. Just as with bulk phase transformations, complexion transition kinetics can be represented on time-temperature-transformation (TTT) diagrams. An experimental complexion TTT diagram is presented here for polycrystalline Eu-doped spinel annealed at 1400–1800°C. This material developed a microstructure with a bimodal grain size distribution, indicating that a complexion transition occurs within this temperature range. The time and temperature dependence of this complexion transition was analyzed and used to produce a grain-boundary complexion TTT diagram for this system. Complexion TTT diagrams have the potential to be remarkably useful tools for manipulating the properties of internal interfaces in polycrystalline metals and ceramics. The development of experimental complexion TTT diagrams is likely to have an important impact on the field of grain-boundary engineering, and hence the development of these experimental diagrams should be an intense area of focus in the coming years.