DC short-circuit current calculation is necessary to design and protect modular multilevel converter-based (MMC-based) multiterminal dc (MTDC) grids. In this article, a general and analytical ...short-circuit current calculation method is proposed for bipolar MTDC grids. For pole-to-pole (P2P) faults, the superposed fault equivalent network of the MTDC grid is first developed in the frequency-domain. Then, a decoupling method based on the network inductance ratio is proposed, which simplifies the high-order network into the superposition of several independent two-order RLC circuits. As a result, the short-circuit current can be expressed as the sum of the currents of these RLC circuits. For pole-to-ground (P2G) faults, the phase-domain dc line impedance considering the coupling effects is determined based on its modal-domain parameters, so that the P2G fault current can be calculated using the method of the P2P fault. The proposed method's effectiveness is verified through simulations and experiments, and the calculation error is classified and analyzed. Compared with the existing methods, the proposed method is more accessible, more accurate, and available for hand-solution.
Large-scale computing system characteristics vary by application class, but power and energy use has become a major problem for all classes. Superconducting computing may be able to serve the needs ...of these systems significantly better than conventional technology. Recent developments in single flux quantum circuit technology for digital logic include variants with greatly improved energy efficiency. Concepts were investigated for computing systems capable of performance in the range from 1 to 1000 PFLOP/s. The concept systems were constrained to use existing commercial cryogenic refrigerators and Nb superconducting technology. In order to meet the performance goals, cache and main memory capable of operating at cryogenic temperatures will be required. Superconducting computing is shown to be potentially competitive on the basis of power and energy efficiency if key component technologies can meet specific goals. Potential advantages of superconducting computing are identified as well as areas requiring further development.
Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips ...owing to its scalability potential together with high thermal stability. Recent progress has demonstrated a capacity for high-speed performance and low power consumption through current-induced magnetization switching. In this paper, we present a compact model of the CoFeB/MgO PMA MTJ, a system exhibiting the best tunnel magnetoresistance ratio and switching performance. It integrates the physical models of static, dynamic, and stochastic behaviors; many experimental parameters are directly included to improve the agreement of simulation with experimental measurements. Mixed simulation based on the 65-nm technology node of a magnetic flip-flop validates its relevance and efficiency for MTJ/CMOS memory and logic chip design.
Battery safety is one of the most crucial issues in the utilization of lithium-ion batteries (LiBs) for all-climate electric vehicles. Short circuit, overcharge, and overheat are three common field ...failures of LiBs. In this paper, online fault diagnosis for external short circuit (ESC) of LiB packs is investigated. The experiments are carried out to obtain and compare ESC characteristics of 18650-type NMC battery pack and single cell. Based on the analysis of experimental results, a two-step equivalent circuit model is established to describe the ESC process and an online model-based scheme is proposed to diagnose ESC faults of battery packs. The proposed scheme is evaluated by experimental data. The results show that it can effectively diagnose ESC faults in 3.5 s after their occurrences with the terminal voltage error less than 25 mV. The proposed scheme has shown great generalization ability. ESC faults of battery packs under different number of cells connected in series and unavailable current information can also be diagnosed at the terminal voltage error less than 48 and 60 mV, respectively.
Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new ...applications during the past quarter century. This book provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits and description of fabrication technologies. It provides you with a broad view of solid state control circuits including various technologies and their comparison and up to date information.
A wideband and compact filter design for common-mode noise suppression in high-speed differential signals is proposed based on two U-shaped and one H-shaped coupled patterned ground structure. An ...equivalent model of three coupled LC resonators to predict the common-mode suppression characteristics is also developed with good agreement to the full-wave simulation and measurement result. A test sample is designed and fabricated on a standard printed circuit board (PCB). It is found the common-mode noise can be reduced by the filter over 15 dB from 3.6 to 9.1 GHz and over 75% of amplitude in the time domain. More important, the differential signal integrity, in terms of insertion loss and group delay in the frequency domain and eye diagrams in the time domain, is not degraded within the wide bandwidth. The fractional bandwidth of the stopband can reach 87% and the filter size is about 0.44 lambda g times 0.44 lambda g . The radiation caused by the common-mode current on the attached I/O cables is also efficiently suppressed by 10 dB on average within the designed stopband. To our best knowledge, it is the first low-cost common-mode filter designed for the gigahertz high-speed signals with the largest fractional bandwidth and most compact size on a PCB.
Substrate integrated waveguide (SIW) technology provides an attractive solution to the integration of planar and nonplanar circuits by using a planar circuit fabrication process. However, it is ...usually difficult to implement the negative coupling structure required for the design of compact canonical folded elliptic or quasi-elliptic cross-coupled bandpass filter on the basis of a single-layer SIW. In this paper, a special planar negative coupling scheme including a magnetic coupling post-wall iris and a balanced microstrip line with a pair of metallic via-holes is studied in detail. Two -band fourth-degree cross-coupled bandpass filters without and with source-load coupling using the negative coupling structures are then proposed and designed. The two novel SIW filters having the same center frequency of 20.5 GHz and respective passband width of 700 and 800 MHz are implemented on a single-layer Rogers RT/Duroid 5880 substrate with thickness of 0.508 mm. Measured results of those filters, which exhibit a high selectivity, and a minimum in-band insertion loss of approximately 0.9 and 1.0 dB, respectively, agree well with simulated results.
The first 77 GHz frequency modulated continuous wave (FMCW) radar transceiver IC with an accurate FMCW chirp signal generator using a 90 nm CMOS process is presented. To realize accurate FMCW radar ...system in CMOS, a PLL synthesizer based FMCW generator with chirp smoothing technique that is able to output linear FMCW frequency chirp using a nonlinear reference chirp signal supplied from a low spec/cost digital-oriented frequency reference is applied. The fabricated IC consists of an LNA, a down-conversion mixer with an output buffer, a driver amplifier, a power amplifier with power combiner, an LO distributer and an FMCW synthesizer. The measured FMCW signal from the proposed FMCW generator achieves 93 kHz frequency error (nonlinearity) at the 77 GHz chip signal. Radar performance of the IC has less than 1% ranging error from 1 m to 8 m distance from the measurement in a laboratory. These results show the transceiver achieves a fundamental function for radar applications with 520 mW power consumptions.
In this paper, a robust short-circuit (SC) protection circuit using Rogowski current sensor (RCS) for SiC MOSFET-based power conversion systems is proposed, along with the detailed theoretical design ...guidelines of the proposed RCS. The proposed RCS circuit is designed to mitigate sensing errors and achieve high sensing performance, which is verified through the double pulse test (DPT). Subsequently, the verified RCS is applied to the proposed SC protection circuit, and protection performances are experimentally validated with fault under load (FUL), hard-switching fault (HSF), and a 5 kW three-phase PWM rectifier. The experimental results demonstrate successful SC protection within approximately 500 ns under FUL, HSF, and 520 ns under the 5 kW three-phase PWM rectifier.
This paper presents the characterization of the temperature-dependent short-circuit performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet . The test platform consisting of a phase-leg ...configuration and a fast speed 10-kV solid state circuit breaker, with temperature control, is introduced in detail. A novel FPGA-based short-circuit protection circuit having a response time of 1.5 μ s is proposed and integrated into the gate driver. The short-circuit protection is validated through the platform. The short-circuit characteristics for both the hard switching fault and fault under load (FUL) types at various dc-link voltages (from 500 V to 6 kV) are tested and discussed. The saturation current increases with dc-link voltage and achieves 360 A at 6 kV. Different from low voltage SiC devices, there is no current spike in FUL type of fault. The temperature-dependent short-circuit performance is also presented from 25 to 125 °C. The difference of short-circuit waveforms at various initial junction temperatures can be neglected. A thermal model of the 10-kV SiC mosfet is built for the junction temperature estimation during the short circuit and for analysis of the initial junction temperature impact on the short-circuit performance.
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