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Eriksson, Mark A; Roberts, Michelle M; Klein, Levente J; Savage, Donald E; Slinker, Keith A; Friesen, Mark; Celler, George; Lagally, Max G
Nature materials, 05/2006, Volume: 5, Issue: 5Journal Article
Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integration, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain by fabricating membranes in which the final strain state is controlled by elastic strain sharing, that is, without the formation of defects. We grow Si/SiGe layers on a substrate from which they can be released, forming nanomembranes. X-ray-diffraction measurements confirm a final strain predicted by elasticity theory. The effectiveness of elastic strain to alter electronic properties is demonstrated by low-temperature longitudinal Hall-effect measurements on a strained-silicon quantum well before and after release. Elastic strain sharing and film transfer offer an intriguing path towards complex, multiple-layer structures in which each layer's properties are controlled elastically, without the introduction of undesirable defects.
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