Doped TiAlN thin films are gaining unprecedented attention in recent times due to their functionality and tuneable properties to meet specific demands. The present article focuses on the influence of ...phosphorous-doped TiAlN thin films deposited using high-power impulse magnetron sputtering. Thin films of different elemental compositions of Ti, Al, and P were sputtered on AISI 5206 steel. The thin film cross-sectional morphology and architecture revealed dense and columnar structures. It was indicated that the (111) diffraction peaks in the XRD pattern shifted to higher angles, while the transverse optics (TO)/longitudinal optics (LO) frequency in the optic phonons region of Raman spectra shifted to the right with the modulation wavelength as the Al and P compositions increase. The elementary composition influences the mechanical properties with the maximum hardness of 28 GPa, and adhesion strength of 15 N attained in thin film with the highest Al and P content. The corrosion rate in all the thin films was reduced by at least two orders of magnitude compared with the uncoated samples. The addition of P increases the corrosion resistance of TiAl(P)N thin films.
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Using a quaternary compound target, Cu(In,Ga)Se2 films are prepared using one‐step, selenization‐free direct current magneton sputtering (DcMS) and high power impulse magnetron sputtering (HiPIMS) ...methods. This study investigates how the sputtering power affects the composition, microstructure, morphology, and electrical characteristics of the films. Film crystallinity is found to be affected by the sputtering power utilized. The films deposited at 0.25 kW are amorphous, whereas those formed at 0.5–1 kW display a chalcopyrite structure with a (112)–preferred orientation. With increased sputtering power, the films’ crystal quality improves, displaying a homogeneous and compact morphology free of peeling and cracking. Elemental measurement of the CIGS films reveals that, depending on the deposition method, the film composition deviates from that of the target. The electrical properties of the deposited films vary with increasing sputtering power.
A single quaternary target is used to fabricate CIGS thin films utilizing two different magnetron sputtering processes that produce various levels of highly ionized plasmas. The growth, morphology, chemical composition, and electrical properties of the films, as well as how the sputtering process, which comprises the sputtering yield and sputtering transfer processes, affect them, are all thoroughly discussed.
Titanium nitride (TiN) thin films continue to attract unprecedented attention due to their favourable mechanical, thermal, electrical and chemical properties. These properties depend, among others, ...on the morphology and the architecture of the thin film, which can be tuned with different configurations of the deposition parameters. This study presents an experimental investigation to tune the properties of TiN thin film deposited using reactive High-power impulse magnetron sputtering (HiPIMS) at different deposition temperatures (without heating (RT) and 400 °C) and substrate bias potentials (of floating, ground, −20 V, −40 V and −60 V). It is demonstrated that the morphological, structural, and mechanical properties of TiN can be tailored by controlling the deposition temperature and substrate potential bias to deposit dense thin films. A maximum hardness of 30 GPa was achieved for the thin film deposited at RT with a bias voltage of −60 V. The failure mechanism of the fracture toughness exhibited an isotropic behaviour at an applied load of 1 and 2 N respectively, for thin films deposited at RT. In contrast, an anisotropic behaviour was observed in the thin film deposited at a temperature of 400 0C.Overall, the thin film deposited at a temperature of 4000C showed an improved fracture toughness resistance (KIC) than the thin films deposited at RT. The use of bias potential was also observed to be beneficial for improving the KIC of the TiN thin films.
This research investigates the influence of friction stir spot welding (FSSW) process parameters on friction stir spot welded aluminium 5083-H116 alloy properties. Various characterisation techniques ...were applied such as optical microscope and scanning electron microscope, the microhardness profile was used to determine the hardness profile, while X-ray diffraction (XRD) was used to determine the phase formation. The electrochemical potentiodynamic polarisation technique was utilised to determine the corrosion behaviour. Based on the findings obtained, the process parameters were found to play a significant role in the microstructural evolution. It was established that the structural, mechanical, corrosion and metallurgical properties were significantly improved compared to the base metal in this research work. It was revealed that the lowest corrosion rate was obtained at a rotational speed of 900 rpm and dwell time of 15 s, respectively. It was also revealed that the welded samples crystallinity was improved from the XRD analysis compared to the base metal. The highest hardness profile was obtained at the stir zone of the welded area. The highest hardness value was achieved at the stir zone of the sample produced at a rotational speed of 900 rpm with an average hardness value of 112.62 HV.
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