Negative MRI and an epileptogenic zone (EZ) adjacent to eloquent areas are two main issues that can be encountered during pre-surgical evaluation for epilepsy surgery. Focal Cortical Dysplasia type ...II (FCD type II) is the most common aetiology underlying a negative MRI.
The objective of this study is to present three cases of pediatric patients exhibiting negative MRI and a seizure onset zone close to eloquent areas, who previously underwent traditional open surgery or SEEG-guided radiofrequency thermocoagulations (RF-TC). After seizure seizure recrudescence, pre-surgical SEEG was re-evaluated and Magnetic Resonance-guided laser interstitial thermal therapy (MRg-LiTT) was performed.
We discuss the SEEG patterns, the planning of laser probes trajectories and the outcomes one year after the procedure.
Pediatric patients who underwent SEEG followed by MRg-LiTT for drug-resistant epilepsy associated with FCD type II at our Centre were included. Pre-surgical videoEEG (vEEG), stereoEEG (sEEG), and MRI were reviewed. Post-procedure clinical outcome (measured by Engel score) and complications rates were evaluated.
Three patients underwent 3 MRg-LiTT procedures from January 2022 to June 2022. Epileptogenic zone was previously studied via SEEG in all the patients. All the three patients pre-surgical MRI was deemed negative. Mean age at seizure onset was 47 months (21–96 months), mean age at MRg-LiTT was 12 years (10 years 10 months – 12 years 9 months). Engel class Ia outcome was achieved in patients #2 and #3, Engel class Ib in patient #1. Mean follow-up length was of 17 months (13 months – 20 months). Complications occurred in one patient (patient #2, extradural hematoma).
The combined use of SEEG and MRg-LiTT in complex cases can lead to good outcomes both as a rescue therapy after failed surgery, but also as an alternative to open surgery after a successful SEEG-guided Radiofrequency Thermocoagulation (RF-TC). Specific SEEG patterns and a previous good outcome from RF-TC can be predictors of a favourable outcome.
In view of the LHC upgrade for the High Luminosity phase (HL-LHC), the ATLAS experiment plans to replace the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising ...candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of thin 100 and 130μm n-in-p planar pixel sensors produced by FBK-CMM with active-edge technology in collaboration with LPNHE and INFN. Beam-test results are presented, with focus on the hit efficiency at the detector edge of a novel design consisting of a staggered deep trench.
We report on the latest results from the development of 3-D silicon radiation detectors at Fondazione Bruno Kessler of Trento (FBK), Italy (formerly ITC-IRST). Building on the results obtained from ...previous devices (3-D Single-Type-Column), a new detector concept has been defined, namely 3-D-DDTC (Double-sided Double-Type Column), which involves columnar electrodes of both doping types, etched from alternate wafer sides, stopping a short distance (d) from the opposite surface. Simulations prove that, if d is kept small with respect to the wafer thickness, this approach can yield charge collection properties comparable to those of standard 3-D detectors, with the advantage of a simpler fabrication process. Two wafer layouts have been designed with reference to this technology, and two fabrication runs have been performed. Technological and design aspects are reported in this paper, along with simulation results and initial results from the characterization of detectors and test structures belonging to the first 3-D-DDTC batch.
Silicon PhotoMultipliers (SiPMs) are a recently developed type of silicon photodetector characterized by high gain and insensitivity to magnetic fields, which make them a suitable detector for the ...next generation high energy and space physics experiments. This paper presents the performance of a readout system for SiPMs based on the MAROC3 ASIC. The ASIC consists of 64 channels working in parallel, each one with a variable gain pre-amplifier, a tunable slow shaper with a sample & hold circuit for the analog readout and a tunable fast shaper for the digital one. In the tests described in this paper, only the analog part of the ASIC has been used. A frontend board based on the MAROC3 ASIC has been tested at CERN coupled to a scintillator-lead shashlik calorimeter, readout with 36 large area SiPMs. The performance of the system has been characterized in terms of linearity and energy resolution on the CERN PS-T9 and SPS-H2 beamlines, using different configurations of the ASIC parameters.
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a ...promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.
A SiPM based readout system for lead tungstate crystals Berra, A.; Bonvicini, V.; Bosisio, L. ...
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment,
12/2013, Letnik:
732
Journal Article
Recenzirano
In recent years Silicon PhotoMultipliers (SiPMs) have been proposed as a new type of readout system for scintillating detectors in many experiments. SiPMs consist of a matrix of parallel-connected ...silicon micro-pixels, which are independent photon counters working in limited Geiger mode with very high gain (∼106). This contribution presents the use of SiPMs (manufactured by FBK-irst) as the readout system of a 3×3 matrix of lead tungstate crystals. The PbWO4 crystals have been provided by the CMS-ECAL group and are pre-production prototypes of the endcap section of the CMS electromagnetic calorimeter; they have a trapezoidal shape (with a front section of 2.86×2.86cm2 and a rear one of 2.96×2.96cm2) and are 22cm long, corresponding to 24.7X0. Each crystal is readout using four SiPMs characterized by an active area of 4×4mm2 and 6400 cells, hosted on the same PCB. The gain equalization of the different SiPMs and its variation with the temperature is corrected using a LED system directly integrated on each PCB. A front-end board based on the MAROC3 ASIC has been used for the readout of the SiPMs signal. The performance of the crystal matrix in terms of linearity and energy resolution has been tested in November 2012 at CERN at the SPS-H2 and PS-T9 beamlines in the 1–150GeV energy range.
In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a ...valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK.
In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the ...pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.
PDF